Samsung says it is developing 40nm process technology, with the aim of producing flash memory chips up to 32 gigabit (Gb) in capacity. Several such chips could soon be combined in memory cards up to 64 gigabytes (GB), the company says. The chips use patent-pending “Charge Trap Flash” (CTF) technology.

The announcement comes two month after Samsung announced 8Gb flash chips.

Additionally, Samsung says CTF technology will scale to 30nm and eventually to 20nm.

Learn more about CTF and Samsung's flash chip roadmap by clicking below to read the full story at DeviceForge:

 
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