Taipei — At the Asian edition of its developer conference, here, Intel today unveiled its newest StrataFlash memory. (The device is officially called the “StrataFlash Wireless Memory,” presumably to emphasize its suitability for use in wireless devices.)

This Flash part, Intel says, is the first to be fabricated in 0.13-micron process technology. It's also the first multi-level-cell flash memory to run at 1.8 -V, they say. Versions will be available in 64, 128 and 256 Mb (megabit) densities.

Where more memory is required, Intel says it will apply a memory stacking technique called “stacked chip scale packaging.” This allows stacking of up to four individual StrataFlash devices to achieve storage densities of up to 1 Gb.

1.8-V StrataFlash parts in the 128 Mb density are currently sampling, with production volumes expected in the second quarter of 2003. Initial suggested pricing has been set at $17.75 in 10,000 unit quantities.

 
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